Daejeon, South Korea

Jae Yoeb Shim


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Jae Yoeb Shim: Innovator in T-Gate Fabrication

Introduction

Jae Yoeb Shim is a notable inventor based in Daejeon, South Korea. He has made significant contributions to the field of electronics, particularly in the fabrication of T-gates. His innovative methods have the potential to enhance the performance and efficiency of electronic devices.

Latest Patents

Jae Yoeb Shim holds a patent for a "Method of Fabricating T-Gate." This method includes several steps: forming a photoresist layer on a substrate, patterning the photoresist layer to create a first opening, and forming a first insulating layer on both the photoresist layer and the substrate. The process continues with the removal of the first insulating layer to expose the substrate, followed by the formation of a second insulating layer. The method allows for the creation of a uniform and elaborate opening that defines the length of a gate, ultimately leading to the fabrication of a more intricate micro T-gate electrode. He has 1 patent to his name.

Career Highlights

Jae Yoeb Shim is affiliated with the Electronics and Telecommunications Research Institute, where he applies his expertise in electronics and telecommunications. His work has been instrumental in advancing technologies that rely on precise gate fabrication.

Collaborations

He has collaborated with notable colleagues, including Hyung Sup Yoon and Dong Min Kang, to further enhance the research and development in their field.

Conclusion

Jae Yoeb Shim's contributions to the method of fabricating T-gates exemplify his innovative spirit and dedication to advancing technology. His work continues to influence the electronics industry positively.

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