Daejon, South Korea

Jae-kyoung Mun


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Innovative Contributions of Inventor Jae-kyoung Mun

Introduction

Jae-kyoung Mun, a notable inventor based in Daejon, South Korea, has made significant strides in the field of semiconductor technology. With a focus on enhancing electronic devices, his innovative approach has led to the development of a unique power device that stands out in its capability and efficiency.

Latest Patents

Jae-kyoung Mun holds one patent which is titled "Pseudomorphic high electron mobility transistor power device." This invention features a sophisticated pseudomorphic high electron mobility transistor (PHEMT) power device designed to operate effectively with a single voltage source. The patent details a method for its manufacturing, showcasing an advanced epitaxial substrate that includes various layers such as a GaAs buffer layer, an AlGaAs/GaAs superlattice layer, and several doped silicon layers, among others. This intricate design enhances the performance of the device and contributes to its overall efficiency in electronic applications.

Career Highlights

Currently, Jae-kyoung Mun works at the Electronics and Telecommunications Research Institute, where he dedicates his expertise to advancing technology within the electronics sector. His contribution to research and development in high electron mobility transistors positions him as a pivotal figure in enhancing electronic device functionality and performance.

Collaborations

Throughout his career, Jae-kyoung Mun has collaborated with several talented individuals, including coworkers Haecheon Kim and Min Je Park. Their combined efforts highlight the importance of teamwork in driving innovation within the research and development field.

Conclusion

Jae-kyoung Mun’s inventive prowess is evident through his patent on the pseudomorphic high electron mobility transistor power device, which represents a significant advancement in semiconductor technology. His contributions not only reflect his technical expertise but also demonstrate the collaborative spirit crucial for innovation in today’s fast-paced technological landscape.

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