Location History:
- Mt. Vernon, IN (US) (1998)
- Baton Rouge, LA (US) (1999 - 2000)
Company Filing History:
Years Active: 1998-2000
Title: Jack D. Davies: Innovator in X-ray Lithography Resists
Introduction
Jack D. Davies is a notable inventor based in Baton Rouge, Louisiana. He has made significant contributions to the field of materials science, particularly in the development of X-ray lithography resists. With a total of 3 patents to his name, Davies has established himself as a key figure in his area of expertise.
Latest Patents
Davies' latest patents focus on X-ray lithography resists made from poly (diene sulfones). These materials exhibit superior properties as X-ray resists, with many having an X-ray sensitivity below about 50 mJ/cm² and a glass transition temperature above approximately 70°C. A preferred formulation is poly (1,3-hexadiene sulfone). The synthesis method disclosed involves dissolving a diene monomer in a molar excess of a nitroalkane at low temperatures, such as dried 2-nitropropane in a -78°C dry ice/acetone bath, and reacting it with sulfur dioxide in the presence of a free radical initiator like tert-butyl-hydroperoxide.
Career Highlights
Jack D. Davies is affiliated with Louisiana State University and Agricultural & Mechanical College, where he continues to advance research in his field. His work has garnered attention for its innovative approach to material synthesis and application in lithography.
Collaborations
Davies has collaborated with notable colleagues, including William H. Daly and Steven A. Soper, contributing to a rich environment of research and innovation.
Conclusion
Jack D. Davies stands out as an influential inventor in the realm of X-ray lithography resists. His innovative work and collaborations continue to impact the field significantly.