Company Filing History:
Years Active: 2015-2016
Title: Innovations of Ja Hyung Han in Semiconductor Technology
Introduction
Ja Hyung Han is an accomplished inventor based in Clifton Park, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on improving the integration methods for semiconductor devices, particularly in the context of through-silicon vias (TSVs).
Latest Patents
Ja Hyung Han's latest patents include innovative methods for shallow trench isolation integration. These patents detail approaches for forming semiconductor devices that incorporate a 'buffer zone' or gap layer between the TSV and transistors. This gap layer is filled with a low-stress thin film fill material, which helps control stresses and prevent crack formation in the devices. Additionally, the gap layer ensures a spatial distance between TSVs and transistors, thereby reducing the adverse effects of temperature excursions.
Career Highlights
Ja Hyung Han is currently employed at Globalfoundries Inc., where he continues to advance semiconductor technology. His expertise in the field has led to the development of critical methods that enhance device performance and reliability.
Collaborations
Throughout his career, Ja Hyung Han has collaborated with notable colleagues, including Hongliang Shen and Kyutae Na. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Ja Hyung Han's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced semiconductor devices, ensuring improved performance and reliability in modern technology.