J Herbert Palm

Title: **Inventor J Herbert Palm: Innovations in Silicon Technology**

Introduction

J Herbert Palm, a notable inventor from Wappingers Falls, NY, has made significant strides in the field of semiconductor technology. With a focus on improving shallow trench isolation structures in silicon integrated circuits, he holds one patent that showcases his innovative approach to materials science.

Latest Patents

J Herbert Palm's patent pertains to the application of thin crystalline silicon nitride (Si₃N₄) liners in shallow silicon integrated circuits. His invention utilizes a crystalline layer of silicon nitride in shallow trench isolation (STI) structures as an O₂-barrier film. The unique properties of crystalline Si₃N₄ significantly lower the density of electron traps when compared to its amorphous counterpart. This advancement not only enhances the performance of integrated circuits but also allows for a broader processing window when depositing low-pressure chemical-vapor deposited (LPCVD) Si₃N₄ films. These films can be deposited at temperatures ranging from 720°C to 780°C. Following deposition, a high-temperature rapid-thermal anneal in pure nitrogen or ammonia at 1050°C to 1100°C for 60 seconds is performed, transforming the film into a more stable amorphous state.

Career Highlights

Throughout his career, J Herbert Palm has worked with leading technology companies such as Siemens Aktiengesellschaft and IBM. His experience in these esteemed organizations has fueled his contributions to the field of semiconductor research, particularly in the development and application of advanced materials.

Collaborations

J Herbert Palm's innovative work has also involved collaboration with notable professionals in the industry, including Herbert Lei Ho and Erwin Hammerl. These partnerships have fostered an environment of shared knowledge and expertise, further enhancing the impact of their collective contributions to technological advancements.

Conclusion

J Herbert Palm's contributions to silicon technology through his patented work demonstrate his commitment to innovation in the semiconductor industry. His breakthroughs in using crystalline silicon nitride for improved shallow trench isolation offer valuable insights and advancements that continue to influence modern integrated circuit design. As technology evolves, the legacy of inventors like J Herbert Palm remains a crucial part of the journey toward more efficient and effective electronic devices.