Company Filing History:
1 out of 1,734 
1 out of 1,630 
Years Active: 2015
Title: Ivan Sanchez Esqueda: Innovator in Semiconductor Reliability
Introduction
Ivan Sanchez Esqueda is a notable inventor based in Venice, CA (US). He has made significant contributions to the field of semiconductor design, particularly in the area of reliability modeling. His innovative approach has led to advancements that enhance the performance and longevity of large-scale CMOS circuits.
Latest Patents
Ivan holds a patent for a "Physics-based reliability model for large-scale CMOS circuit design." This patent relates to systems and methods for simulating physical active semiconductor components using in silico active semiconductor components. The invention focuses on simulating charge degradation effects in circuit simulations. A simulated defect signal level is produced to represent these effects, allowing for external simulation without the need to reprogram the in silico active semiconductor component. This innovation streamlines the process of assessing circuit reliability over time.
Career Highlights
Throughout his career, Ivan has worked with prestigious institutions such as Arizona State University and the University of Southern California. His experience in these academic environments has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research.
Collaborations
Ivan has collaborated with Hugh Barnaby, further enhancing his work in semiconductor reliability and circuit design.
Conclusion
Ivan Sanchez Esqueda is a pioneering inventor whose work in semiconductor reliability has the potential to transform circuit design practices. His contributions are invaluable to the field and continue to influence future innovations.