This inventor holds 1 USPTO granted patent. Top assignee: Matsushita Electric Industrial Co., Ltd.. Active years: 1994.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1994
Title: Issei Ota: Innovator in Semiconductor Laser Technology
Introduction
Issei Ota is a prominent inventor based in Fujiidera, Japan. He is known for his contributions to semiconductor laser technology, particularly in the development of devices that enhance performance and reduce noise.
Latest Patents
Ota holds a patent for a semiconductor laser device that includes a gallium-aluminum arsenic compound. This innovative device features a Ga.sub.1-y Al.sub.y As cladding layer of a conduction type on at least one principal plane of an active layer. Additionally, a Ga.sub.1-Z Al.sub.Z As current blocking layer of the other conduction type is provided on the cladding layer, which has a stripe-like window. The relationship between the AlAs mode fractions Y and Z is defined by Z > Y. This semiconductor laser device is notable for its low noise levels and low operating current value.
Career Highlights
Ota is associated with Matsushita Electric Industrial Co., Ltd., where he has made significant advancements in semiconductor technology. His work has contributed to the development of more efficient and reliable laser devices.
Collaborations
Ota has collaborated with notable colleagues, including Hiroki Naitou and Masahiro Kume, to further enhance the capabilities of semiconductor laser devices.
Conclusion
Issei Ota's innovative work in semiconductor laser technology has made a lasting impact on the field. His patent for a semiconductor laser device exemplifies his commitment to advancing technology and improving device performance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile