Fujiidera, Japan

Issei Ota


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 1994

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1 patent (USPTO):Explore Patents

Title: Issei Ota: Innovator in Semiconductor Laser Technology

Introduction

Issei Ota is a prominent inventor based in Fujiidera, Japan. He is known for his contributions to semiconductor laser technology, particularly in the development of devices that enhance performance and reduce noise.

Latest Patents

Ota holds a patent for a semiconductor laser device that includes a gallium-aluminum arsenic compound. This innovative device features a Ga.sub.1-y Al.sub.y As cladding layer of a conduction type on at least one principal plane of an active layer. Additionally, a Ga.sub.1-Z Al.sub.Z As current blocking layer of the other conduction type is provided on the cladding layer, which has a stripe-like window. The relationship between the AlAs mode fractions Y and Z is defined by Z > Y. This semiconductor laser device is notable for its low noise levels and low operating current value.

Career Highlights

Ota is associated with Matsushita Electric Industrial Co., Ltd., where he has made significant advancements in semiconductor technology. His work has contributed to the development of more efficient and reliable laser devices.

Collaborations

Ota has collaborated with notable colleagues, including Hiroki Naitou and Masahiro Kume, to further enhance the capabilities of semiconductor laser devices.

Conclusion

Issei Ota's innovative work in semiconductor laser technology has made a lasting impact on the field. His patent for a semiconductor laser device exemplifies his commitment to advancing technology and improving device performance.

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