Company Filing History:
Years Active: 1996-2005
Title: Isao Amano: Innovator in Semiconductor Technology
Introduction
Isao Amano is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
Amano's latest patents include innovative designs for semiconductor devices and methods for fabricating them. One notable patent describes a semiconductor device that comprises a conducting layer with a channel region, a source region, and a drain region. The device features a body region connected to the channel region, along with a gate electrode formed above the channel region, interposing a gate insulation film. Additionally, a dummy electrode is formed on the body region near the interface between the drain region and the body region, ensuring electrical insulation from the gate electrode. This design allows for a significant reduction in gate capacitance, which helps suppress the deterioration of speed performance in transistors.
Career Highlights
Isao Amano is currently employed at Fujitsu Corporation, where he continues to develop cutting-edge semiconductor technologies. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.
Collaborations
Amano has collaborated with notable colleagues in his field, including Akinori Tahara and Takashi Iida. These partnerships have contributed to the successful development of innovative semiconductor solutions.
Conclusion
Isao Amano's contributions to semiconductor technology have established him as a key figure in the industry. His innovative patents and collaborations reflect his commitment to advancing technology and improving device performance.