Inn K Lee

Title: Innovations by Inn K Lee

Introduction

Inn K Lee is a notable inventor based in Houston, TX (US), recognized for his contributions to the field of semiconductor technology. He holds a total of 3 patents, showcasing his expertise and innovative spirit in developing advanced memory cell technologies.

Latest Patents

Among his latest patents is a method of making an EEPROM cell with separate erasing and programming. This invention involves forming an electrically-erasable, electrically-programmable, read-only-memory cell array in pairs at a face of a semiconductor substrate. Each memory cell consists of a source region and a drain region, with a corresponding channel region in between. The design includes a Fowler-Nordheim tunnel-window located over the source line connected to the source. The floating gate and control gate are structured to optimize the programming and erasing processes independently. Another significant patent by Inn K Lee is the method of making an EEPROM array with buried N+ windows, which also emphasizes the separation of programming and erasing regions for enhanced performance.

Career Highlights

Inn K Lee is currently employed at Texas Instruments Corporation, where he continues to innovate and contribute to the advancement of semiconductor technologies. His work has significantly impacted the efficiency and functionality of memory devices.

Collaborations

Throughout his career, Inn K Lee has collaborated with talented individuals such as Manzur Gill and Sung-Wei Lin, who have contributed to his projects and innovations.

Conclusion

Inn K Lee's work in the field of semiconductor technology exemplifies the spirit of innovation and dedication to advancing memory cell technologies. His patents reflect a commitment to improving the efficiency and effectiveness of electronic devices.