Washingtonville, NY, United States of America

Inge G Fulton


Average Co-Inventor Count = 6.2

ph-index = 3

Forward Citations = 168(Granted Patents)


Company Filing History:


Years Active: 1987-1992

where 'Filed Patents' based on already Granted Patents

3 patents (USPTO):

Title: **Inge G. Fulton: A Pioneer in Transistor Fabrication**

Introduction

Inge G. Fulton, a remarkable inventor based in Washingtonville, NY, has made significant contributions to the field of semiconductor technology. With a total of three patents to her name, she has established herself as a leading innovator in the fabrication of transistors, which are essential components in modern electronics.

Latest Patents

Among her noteworthy inventions, Fulton's latest patents include a method for fabricating a narrow base transistor. This innovative method involves several steps: it starts with providing a substrate of semiconductor material that includes a region of first conductivity type. Subsequently, she forms a first layer of second conductivity type epitaxial semiconductor material over the region, followed by a second layer of the same type but with relatively higher dopant concentration. The process also entails oxidizing a portion of the second layer and then removing the oxidized portion to expose part of the first layer, which forms an intrinsic base region. This advanced fabrication method is preferably executed using low-temperature, ultra-high vacuum, epitaxial deposition processes, highlighting Fulton's expertise in creating efficient semiconductor devices.

Career Highlights

Fulton's career has been marked by her tenure at prestigious organizations such as the International Business Machines Corporation (IBM), where she honed her skills and contributed to groundbreaking technologies. Her experience within the company and the critical roles she undertook have positioned her as a prominent figure in the semiconductor industry.

Collaborations

Throughout her career, Fulton has collaborated with talented professionals, including Jeffrey L. Blouse and Russell C. Lange. These collaborations have fostered a rich exchange of ideas and have undoubtedly influenced her innovative approach to transistor fabrication.

Conclusion

Inge G. Fulton continues to be an inspiration in the world of inventors. With her innovative techniques in semiconductor fabrication, she has contributed immensely to the advancement of technology. Her work not only reflects her technical prowess but also demonstrates her commitment to innovation in the field of electronics.

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