Dresden, Germany

Ines Thümmel

This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ines Thümmel. Retrieved from https://idiyas.com/inventor/ines-thanduumlmmel

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Ines Thümmel: Innovator in Semiconductor Manufacturing

Introduction

Ines Thümmel is a prominent inventor based in Dresden, Germany. She has made significant contributions to the field of semiconductor manufacturing, particularly through her innovative methods that enhance production efficiency and device reliability.

Latest Patents

Ines Thümmel holds a patent for a "Method for clamping a semiconductor device in a manufacturing process." This patent describes a technique for clamping a semiconductor wafer, especially those with a diameter of 300 mm or larger. The method involves depositing at least one encapsulating material layer over both the front and back sides of the wafer. The front side material layer is selectively etched to create a predetermined structure. To address wafer warpage caused by unequal bowing stress, the backside material layer is partially or completely removed, thereby reducing the warpage. The semiconductor device is then clamped using electrostatic, physical, or vacuum methods during the manufacturing process.

Career Highlights

Ines Thümmel is associated with Infineon Technologies AG, a leading company in semiconductor solutions. Her work has been instrumental in advancing manufacturing techniques that improve the performance and reliability of semiconductor devices.

Collaborations

In her career, Ines has collaborated with notable colleagues such as Manfred Kraxenberger and Bruno Spuler. Their combined expertise has contributed to the successful development of innovative semiconductor technologies.

Conclusion

Ines Thümmel's contributions to semiconductor manufacturing through her patented methods demonstrate her commitment to innovation in the field. Her work not only enhances production processes but also sets a standard for future advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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