Ik Soo Do

Title: Innovations by Ik Soo Do in Semiconductor Technology

Introduction

Ik Soo Do is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of methods that enhance the fabrication of semiconductor devices.

Latest Patents

Ik Soo Do holds a patent for "Semiconductor devices and methods for fabricating the same." This patent describes a method of fabricating a semiconductor device that includes several key steps. The process involves forming a trench on a substrate, creating a gate electrode by depositing and planarizing an oxide layer and polysilicon, and forming a gate oxide layer and a polysilicon layer on the substrate. Additionally, source/drain regions are created through a photo process, and a contact plug is formed on at least one of the source/drain regions. The method emphasizes controlling the overlap between the gate and the source/drain regions using a source/drain mask, which simplifies current control and facilitates the fabrication of sensitive devices. The design also allows for sufficient spacing between the gate and the contacts due to the buried type gate, making the overall fabrication process more efficient.

Career Highlights

Ik Soo Do is currently associated with Anam Semiconductor Inc., where he continues to contribute to advancements in semiconductor technology. His expertise and innovative approaches have positioned him as a valuable asset in the industry.

Conclusion

Ik Soo Do's work in semiconductor technology exemplifies the impact of innovation on device fabrication. His patent reflects a significant advancement in the field, showcasing his dedication to improving semiconductor processes.