Munich, Germany

Ibrahim M Khalil

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Forschungsverbund Berlin E.v.. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ibrahim M Khalil. Retrieved from https://idiyas.com/inventor/ibrahim-m-khalil

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Ibrahim M Khalil: Innovator in Field Effect Transistor Technology

Introduction

Ibrahim M Khalil is a notable inventor based in Munich, Germany. He has made significant contributions to the field of electronics, particularly in the area of field effect transistors. His innovative work has led to the development of a unique patent that addresses challenges in radio frequency applications.

Latest Patents

Ibrahim M Khalil holds a patent for a "Self-adjusting gate bias network for field effect transistors." This invention is designed to improve the performance of field effect transistors in radio frequency applications. The patent describes a bias network that includes a field effect transistor with a source electrode connected to ground and a drain electrode connected to a load. A radio frequency network is connected to the gate electrode, along with a gate bias network. A device with a non-linear characteristic is placed in series between the gate electrode and the gate bias network. This configuration reduces or prevents a forward bias current at the gate electrode, leading to self-adjustment of the bias point under overdrive conditions. This innovation enhances the reduction of distortions in amplifiers and can change the class of oscillators connected to the gate electrode.

Career Highlights

Ibrahim M Khalil is currently associated with Forschungsverbund Berlin E.V., where he continues to work on advancing technology in his field. His expertise in electronics and innovative thinking have positioned him as a valuable contributor to the research community.

Collaborations

Ibrahim has collaborated with notable colleagues such as Roland Gesche and Silvio Kuehn. Their combined efforts in research and development have furthered advancements in the technology surrounding field effect transistors.

Conclusion

Ibrahim M Khalil's contributions to the field of electronics, particularly through his patent on self-adjusting gate bias networks, demonstrate his innovative spirit and commitment to improving technology. His work continues to influence the development of more efficient electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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