Company Filing History:
Years Active: 2014
Title: Ian Kennedy - Innovator in MOSFET Technology
Introduction
Ian Kennedy is a notable inventor based in Cheshire, GB. He has made significant contributions to the field of semiconductor technology, particularly with his innovative patent related to MOSFET devices. His work exemplifies the intersection of engineering and practical application in modern electronics.
Latest Patents
Ian Kennedy holds a patent for a MOSFET with a temperature sense facility. This invention integrates a Field Effect Transistor (FET) with a temperature sensing diode. The design includes a gate drive circuit that switches off the FET, while a biasing circuit drives a constant current through the diode. The voltage across the diode is measured by a voltage sensor, which provides a measure of the temperature of the FET. This innovation enhances the reliability and performance of MOSFET devices in various applications.
Career Highlights
Ian Kennedy is associated with NXP B.V., a leading company in the semiconductor industry. His role at NXP B.V. allows him to work on cutting-edge technologies and contribute to advancements in electronic components. His expertise in semiconductor design and innovation has positioned him as a valuable asset in his field.
Collaborations
Ian collaborates with talented professionals such as Keith Heppenstall and Adam Brown. Their combined efforts in research and development foster an environment of innovation and creativity, leading to advancements in semiconductor technology.
Conclusion
Ian Kennedy's contributions to the field of MOSFET technology demonstrate his commitment to innovation and excellence. His patent for a MOSFET with a temperature sense facility showcases his ability to integrate complex systems for improved performance. Through his work at NXP B.V. and collaborations with fellow inventors, he continues to make a significant impact in the world of electronics.