Ian J Saunders

Title: Ian J Saunders: Innovator in Semiconductor Technology

Introduction

Ian J Saunders is a notable inventor based in Morecambe, GB. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for creating high resistivity regions in gallium arsenide.

Latest Patents

Ian J Saunders holds 2 patents. His latest patents include:

1. **Method of forming high resistivity regions in GaAs by deuteron** - This patent describes a process for producing regions of high resistivity in gallium arsenide and related compounds. The method involves implanting deuterons into a semiconductor substrate with energies that correspond to a desired depth of penetration. An apparatus for carrying out this process is also detailed.

2. **Semiconductor devices containing protons and deuterons implanted regions** - This patent outlines a process for manufacturing gallium arsenide devices. It involves creating regions of high resistivity by bombarding these regions with protons followed by deuterons.

Career Highlights

Ian J Saunders is associated with the United Kingdom Atomic Energy Authority, where he has been instrumental in advancing semiconductor technologies. His work has had a lasting impact on the field, particularly in the development of high-performance semiconductor devices.

Collaborations

Throughout his career, Ian has collaborated with esteemed colleagues such as Geoffrey Dearnaley and Kenneth Steeples. These collaborations have further enriched his research and contributions to semiconductor technology.

Conclusion

Ian J Saunders is a prominent figure in the semiconductor industry, known for his innovative patents and contributions to the field. His work continues to influence the development of advanced semiconductor devices.