Hyunjun Kim

Title: Innovations by Hyunjun Kim in Plasma Technology

Introduction

Hyunjun Kim is an accomplished inventor based in Campbell, California. He has made significant contributions to the field of plasma technology, particularly in methods for treating substrates after exposure to radiation. His innovative approach has led to the development of a unique apparatus that enhances the efficiency of post-exposure bake operations.

Latest Patents

Hyunjun Kim holds a patent for a "Chamber and methods of treating a substrate after exposure to radiation." This patent describes a method and apparatus that includes a plate stack, which enables the formation of a first high ion density plasma. The ion concentration within this plasma is then reduced using a diffuser to create a second low ion density plasma, which can be an electron cloud or a dark plasma. An electric field is established between a substrate support and the diffuser during the post-exposure bake of a substrate. This innovative design allows for effective electrical coupling between the substrate support and the diffuser, enhancing the overall process.

Career Highlights

Hyunjun Kim is currently employed at Applied Materials, Inc., a leading company in the semiconductor and display technology sectors. His work at Applied Materials has positioned him as a key player in advancing plasma technology applications. His expertise and innovative mindset have contributed to the company's reputation for excellence in the industry.

Collaborations

Throughout his career, Hyunjun Kim has collaborated with notable colleagues, including Dmitry Lubomirsky and Douglas A Buchberger, Jr. These collaborations have fostered a dynamic exchange of ideas and have further propelled advancements in their respective fields.

Conclusion

Hyunjun Kim's contributions to plasma technology and his innovative patent demonstrate his commitment to advancing the field. His work at Applied Materials, along with his collaborations, highlights the importance of teamwork in driving technological progress.