This inventor holds 1 USPTO granted patent. Top assignee: Nesscap Co., Ltd.. Active years: 2020.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2020
Title: Hyung Sik Ahn: Innovator in Electric Double-Layer Devices
Introduction
Hyung Sik Ahn is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of electric double-layer devices, showcasing his expertise and innovative spirit. His work has led to advancements that enhance the performance and lifespan of these devices.
Latest Patents
Hyung Sik Ahn holds a patent for an electric double-layer device. This invention includes a urethane potting unit designed to fill the gaps between exposed terminals and their respective through holes. The aluminum terminals in the device are anodized to form an aluminum oxide film, which significantly increases the lifespan of the electric double-layer device. He has 1 patent to his name.
Career Highlights
Hyung Sik Ahn is currently employed at Nesscap Co., Ltd., where he continues to develop innovative solutions in the field of energy storage. His work at the company has positioned him as a key player in advancing technology related to electric double-layer devices.
Collaborations
Hyung Sik Ahn collaborates with talented coworkers, including Na Ri Shin and Sung Wook Yoo. Their combined efforts contribute to the innovative projects at Nesscap Co., Ltd.
Conclusion
Hyung Sik Ahn's contributions to the field of electric double-layer devices demonstrate his commitment to innovation and excellence. His patent and ongoing work at Nesscap Co., Ltd. highlight his role as a significant inventor in the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile