Hyoung-Jo Huh

Title: Hyoung-Jo Huh: Innovator in Semiconductor Memory Technology

Introduction

Hyoung-Jo Huh is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of memory devices. His innovative approach has led to advancements that enhance the performance and reliability of semiconductor memory devices.

Latest Patents

Hyoung-Jo Huh holds a patent for a "Method of making semiconductor memory device having a floating gate with a rounded edge." This patent describes a semiconductor memory device that features a floating gate and outlines a method for its manufacturing. The process involves depositing a conductive layer for the floating gate on a semiconductor substrate and etching it to create a conductive layer pattern. An annealing process is then performed in a hydrogen gas atmosphere. Additionally, the conductive layer pattern can be etched using either a dry or wet etching method. This innovative design ensures that at least one edge of the conductive layer pattern is rounded, which minimizes the concentration of electric fields at the edges and reduces the likelihood of a thinner dielectric layer on the floating gate.

Career Highlights

Hyoung-Jo Huh is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His work at Samsung has allowed him to be at the forefront of semiconductor innovation, contributing to the development of cutting-edge memory technologies.

Collaborations

Hyoung-Jo Huh has collaborated with fellow inventor Man-Sug Kang, working together to advance semiconductor technology and improve memory device designs.

Conclusion

Hyoung-Jo Huh's contributions to semiconductor memory technology exemplify the importance of innovation in the electronics industry. His patented methods and collaborative efforts continue to influence the development of more efficient and reliable memory devices.