Company Filing History:
Years Active: 2004-2012
Title: Hyo-Joo Ahn: Innovator in Semiconductor Memory Technology
Introduction
Hyo-Joo Ahn is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor memory devices, holding a total of 7 patents. His work focuses on enhancing the efficiency and functionality of memory technology.
Latest Patents
One of Hyo-Joo Ahn's latest patents is a multi-port semiconductor memory device having variable access paths and the method for its implementation. This innovative device includes multiple input/output ports and a memory array divided into several memory areas. A select control unit variably manages access paths between these memory areas and the input/output ports, allowing each memory area to be accessed through at least one of the input/output ports. Another notable patent is for a semiconductor memory device that features a substrate with first and second memory-cell array regions and corresponding sense-circuit regions. This design includes bitlines and column-selection transistors that enhance the device's operational capabilities.
Career Highlights
Hyo-Joo Ahn is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has positioned him as a key player in the development of advanced semiconductor technologies.
Collaborations
Hyo-Joo Ahn has collaborated with notable colleagues, including Nam-Jong Kim and Ho-Cheol Lee. These partnerships have contributed to the successful development of innovative memory solutions.
Conclusion
Hyo-Joo Ahn's contributions to semiconductor memory technology are noteworthy, and his patents reflect his commitment to innovation in this field. His work continues to influence advancements in memory devices, showcasing the importance of his research and development efforts.