Company Filing History:
Years Active: 1998
Title: Hyeong Joon Kim: Innovator in Semiconductor Technology
Introduction
Hyeong Joon Kim is a notable inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for improving electrical properties in semiconductor devices.
Latest Patents
Hyeong Joon Kim holds a patent for a "Method for the formation of polycide gate in semiconductor device." This patent describes a method that involves forming amorphous silicon and polysilicon over a gate insulating film atop a semiconductor substrate. The process includes implanting impurity ions into the polysilicon and conducting heat treatment. Additionally, a layer of refractory metal is formed over the silicon, followed by further heat treatment to create polycide. This method effectively prevents degradation caused by impurity penetration and thermal instability, thereby enhancing the electrical properties of the device.
Career Highlights
Hyeong Joon Kim is associated with LG Semicon Co., Ltd., where he continues to work on advancing semiconductor technologies. His expertise and innovative approaches have positioned him as a key figure in the industry.
Collaborations
Hyeong Joon Kim collaborates with Jeong Soo Byun, contributing to the development of cutting-edge semiconductor solutions.
Conclusion
Hyeong Joon Kim's work in semiconductor technology exemplifies the impact of innovative methods on improving device performance. His contributions are vital to the ongoing advancements in the field.