Foshan, China

Huiyang Li

USPTO Granted Patents = 6 

Average Co-Inventor Count = 3.3

ph-index = 1


Company Filing History:


Years Active: 2024-2025

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6 patents (USPTO):Explore Patents

Title: Innovations of Huiyang Li in Organic Light-Emitting Devices

Introduction

Huiyang Li is a prominent inventor based in Foshan, China, known for his significant contributions to the field of organic light-emitting devices. With a total of six patents to his name, he has made remarkable advancements that enhance the efficiency and longevity of these devices.

Latest Patents

Huiyang Li's latest patents include a metal complex and its application in organic light-emitting devices. This invention relates to a metal complex characterized by a specific chemical formula, which is designed to emit deep red or near-infrared light. The metal complex demonstrates a lower driving voltage and higher luminous efficiency, significantly prolonging the service life of the devices. Another notable patent is a platinum metal complex, which also finds application in organic light-emitting devices. This complex offers a relatively low driving voltage and high luminous efficiency, further improving the service life of the devices.

Career Highlights

Huiyang Li is currently associated with Guangdong Aglaia Optoelectronic Materials Co., Ltd., where he continues to innovate in the field of optoelectronic materials. His work has been instrumental in advancing the technology behind organic light-emitting devices, making them more efficient and durable.

Collaborations

Huiyang Li collaborates with talented individuals such as Lei Dai and Lifei Cai, contributing to a dynamic research environment that fosters innovation and development in optoelectronic technologies.

Conclusion

Huiyang Li's contributions to the field of organic light-emitting devices through his patents and collaborations highlight his role as a key innovator in the industry. His work not only enhances the performance of these devices but also paves the way for future advancements in optoelectronic materials.

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