Hsueh-Chang Sung

Title: Hsueh-Chang Sung: Innovator in Semiconductor Technology

Introduction

Hsueh-Chang Sung is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

One of Hsueh-Chang Sung's key patents is titled "Method of forming devices with strained source/drain structures." This patent describes a method that includes etching a trench in a substrate adjacent to a gate structure. The trench features a bottom surface and a tip portion extending under a spacer of the gate structure. The method further involves epitaxially growing a first semiconductor material in the trench, ensuring that it covers the entirety of the bottom surface and grows in the tip portion. Additionally, a second semiconductor material, which differs from the first, is epitaxially grown in the trench, covering the first semiconductor material and directly contacting the substrate.

Career Highlights

Hsueh-Chang Sung is currently employed at Aiwan Semiconductor Manufacturing Company, Ltd. His work at this company has allowed him to focus on advancing semiconductor technologies and developing innovative solutions in the industry.

Collaborations

Some of Hsueh-Chang Sung's coworkers include Tsz-Mei Kwok and Kuan-Yu Chen. Their collaboration contributes to the innovative environment at Aiwan Semiconductor Manufacturing Company, Ltd.

Conclusion

Hsueh-Chang Sung's contributions to semiconductor technology through his patent demonstrate his expertise and commitment to innovation in the field. His work continues to influence advancements in device manufacturing.