Hsing Hsiung Chen

Title: Hsing Hsiung Chen: Innovator in Molybdenum Processing

Introduction

Hsing Hsiung Chen is a notable inventor based in Poughkeepsie, NY, with a focus on advancements in the field of semiconductor manufacturing. He holds two patents that showcase his innovative approaches to etching and corrosion resistance in molybdenum materials.

Latest Patents

Chen's latest patents include a method of etching molybdenum metal from substrates and a corrosion-resistant molybdenum mask. The etching method provides an environmentally safe process for removing extraneous molybdenum from ceramic substrates, particularly in semiconductor devices. This multi-step process utilizes an acidic aqueous solution of a ferric salt, followed by treatment with an organic quaternary ammonium hydroxide to eliminate any molybdenum black oxides. This method significantly reduces hazardous waste compared to traditional ferricyanide salt methods. The corrosion-resistant molybdenum mask is designed for sputter deposition, featuring a coating of transition metal carbide that protects the metal images from degradation, thereby extending the mask's usable life.

Career Highlights

Hsing Hsiung Chen is currently employed at International Business Machines Corporation (IBM), where he contributes to cutting-edge research and development in semiconductor technologies. His work has had a significant impact on improving manufacturing processes and environmental safety in the industry.

Collaborations

Some of Chen's notable coworkers include Peter H Berasi and Krishna Gandhi Sachdev, who collaborate with him on various projects within IBM.

Conclusion

Hsing Hsiung Chen's contributions to the field of semiconductor manufacturing through his innovative patents demonstrate his commitment to advancing technology while prioritizing environmental safety. His work continues to influence the industry positively.