Hsin-Hsin Hsieh

Title: Hsin-Hsin Hsieh: Innovator in Photoelectric Conversion Technologies

Introduction

Hsin-Hsin Hsieh is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of photoelectric conversion technologies, holding a total of four patents. His work focuses on innovative solutions that enhance the efficiency and functionality of cell modules and related compounds.

Latest Patents

Hsieh's latest patents include a novel cell module design. This cell module features a first substrate and a second substrate positioned opposite each other. A cell unit is situated between these substrates, with a first thermosetting resin layer placed between the cell unit and the first substrate. Additionally, a first protective layer is located between the cell unit and the first thermosetting resin layer, while a second thermosetting resin layer is positioned between the cell unit and the second substrate. Notably, the first protective layer comprises a first polymer, with a cross-linking degree ranging from 0 to 42.3%. Another significant patent involves a photoelectric conversion compound, which is characterized by a specific structure represented by formula (I).

Career Highlights

Hsin-Hsin Hsieh is affiliated with the Industrial Technology Research Institute, where he continues to advance research and development in his field. His innovative approaches have garnered attention and recognition within the scientific community.

Collaborations

Hsieh has collaborated with notable colleagues, including Min-Tsung Kuan and Wen-Hsien Wang. Their joint efforts contribute to the advancement of technology in photoelectric conversion.

Conclusion

Hsin-Hsin Hsieh's work exemplifies the spirit of innovation in the field of photoelectric conversion technologies. His patents reflect a commitment to enhancing the efficiency and effectiveness of cell modules, making a lasting impact on the industry.