Fremont, CA, United States of America

Hsin-Fu Wang

USPTO Granted Patents = 2 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 20(Granted Patents)


Company Filing History:


Years Active: 2009-2011

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Hsin-Fu Wang: Innovator in MEMS Technology

Introduction

Hsin-Fu Wang is a notable inventor based in Fremont, California, recognized for his contributions to the field of Micro-Electro-Mechanical Systems (MEMS). With a total of two patents to his name, Wang has made significant advancements in the technology that underpins modern electronic devices.

Latest Patents

Wang's latest patents focus on the development of a diffusion barrier layer for MEMS devices. This innovation describes the use of a diffusion barrier layer between metallic layers in MEMS devices. The diffusion barrier layer prevents the mixing of two metals, which can alter desired physical characteristics and complicate processing. In one example, this barrier layer may be utilized as part of a movable reflective structure in interferometric modulators.

Career Highlights

Throughout his career, Hsin-Fu Wang has worked with prominent companies such as IDC, LLC and Qualcomm MEMS Technologies, Inc. His work in these organizations has contributed to the advancement of MEMS technology and its applications in various industries.

Collaborations

Wang has collaborated with several professionals in his field, including Ming-Hau Tung and Stephen Zee. These collaborations have further enriched his work and have led to innovative solutions in MEMS technology.

Conclusion

Hsin-Fu Wang's contributions to MEMS technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the development of advanced electronic devices.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…