Hsiao-Fu Lu

Title: Hsiao-Fu Lu: Innovator in Micro Device Manufacturing

Introduction

Hsiao-Fu Lu is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of micro device manufacturing, showcasing his expertise through innovative patent applications. His work focuses on advancing technology in the production of micro devices, which are essential in various electronic applications.

Latest Patents

Hsiao-Fu Lu holds a patent for a method of manufacturing micro devices. This method involves preparing a GaN-based epitaxial structure that includes a p-type GaN layer, an n-type GaN layer on the p-type layer, and an undoped GaN layer on the n-type layer. The process includes forming a photoresist layer on the GaN-based structure, patterning the photoresist layer, and performing a plasma etching process to create a plurality of mesas on the etched structure. The height of these mesas is at least 1.0 μm. The process continues until the undoped GaN layer is completely removed, resulting in the formation of multiple micro devices.

Career Highlights

Hsiao-Fu Lu is associated with Mikro Mesa Technology Co., Ltd., where he applies his innovative techniques in micro device manufacturing. His work has positioned him as a key figure in the development of advanced manufacturing processes in the semiconductor industry.

Collaborations

Hsiao-Fu Lu collaborates with Li-Yi Chen, contributing to the advancement of their projects and enhancing the capabilities of Mikro Mesa Technology Co., Ltd.

Conclusion

Hsiao-Fu Lu's contributions to micro device manufacturing through his innovative patent demonstrate his commitment to advancing technology in this field. His work continues to influence the development of micro devices, making a significant impact on the industry.