Company Filing History:
Years Active: 2025
Title: Hshiang An: Innovator in Plasma Processing Technology
Introduction
Hshiang An is a notable inventor based in Santa Clara, CA (US). He has made significant contributions to the field of plasma processing technology, particularly in the area of impedance control during substrate processing.
Latest Patents
Hshiang An holds 1 patent for his invention titled "Impedance control of local areas of a substrate during plasma deposition thereon in a large PECVD chamber." This patent relates to methods and apparatus for measuring and controlling local impedances at a substrate support in a plasma processing chamber. The invention includes a substrate support with multiple support pins, where the radio frequency voltage, current, and phase of each pin are measured, allowing for real-time adjustments of impedances. The technology utilizes adjustable impedance circuits that can be remotely controlled, enhancing the efficiency of plasma processing.
Career Highlights
Hshiang An is currently employed at Applied Materials, Inc., a leading company in the semiconductor and display industries. His work focuses on advancing plasma processing techniques, which are crucial for the manufacturing of electronic devices.
Collaborations
Hshiang has collaborated with notable colleagues, including Zheng John Ye and Andrew C Lam, contributing to innovative solutions in the field of plasma technology.
Conclusion
Hshiang An's work in impedance control during plasma deposition represents a significant advancement in semiconductor manufacturing technology. His contributions continue to influence the industry and pave the way for future innovations.