Horng S Fu

Title: Horng S Fu: Innovator in MESFET Semiconductor Technology

Introduction

Horng S Fu is a notable inventor based in Sunnyvale, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of MESFETs. With a total of two patents to his name, Fu's work has had a considerable impact on the industry.

Latest Patents

Fu's latest patents focus on a self-aligned gate method for making MESFET semiconductors. This innovative process utilizes a vertical (anisotropic) etch to self-align the gate and source/drain. The combination of the vertical etch and a two-level insulator creates a barrier between the gate and source/drain. As a result, when metal is deposited and reacted, the gate becomes self-aligned with the source/drain. This method ensures that contacts to the source/drain and gate are well isolated. The alignment achieved through this process reduces series channel resistance and allows for a more compact structure, enhancing packing density.

Career Highlights

Horng S Fu is currently employed at Texas Instruments Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of MESFETs, making them more efficient and effective for various applications.

Collaborations

Fu has collaborated with notable colleagues, including Theodore Warren Houston and Al F Tasch, Jr. These partnerships have contributed to the success of his projects and the advancement of semiconductor technology.

Conclusion

Horng S Fu is a distinguished inventor whose contributions to MESFET semiconductor technology have made a lasting impact. His innovative approaches and collaborations continue to drive advancements in the field.