Company Filing History:
Years Active: 1976-1981
Title: The Innovations of Horace C. Casey, Jr.
Introduction
Horace C. Casey, Jr. is a notable inventor based in Summit, NJ (US). He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of Gallium Arsenide (GaAs) devices. With a total of 4 patents to his name, Casey's work has had a lasting impact on the industry.
Latest Patents
One of his latest patents focuses on a method of fabricating GaAs devices utilizing a semi-insulating layer. This innovative approach reduces surface recombination current in GaAs devices by employing a semi-insulating, oxygen, iron, or chromium doped monocrystalline layer of AlGaAs grown by Molecular Beam Epitaxy (MBE). The AlGaAs layer is strategically grown on a GaAs body and subsequently masked. The diffusion of suitable impurities through a window in the mask converts the exposed portions of the AlGaAs layer to low resistivity, thereby modifying the conductivity of the underlying zone of the GaAs body. The peripheral portions of the AlGaAs layer remain semi-insulating, effectively reducing the surface recombination velocity-diffusion length product by more than an order of magnitude.
Career Highlights
Horace C. Casey, Jr. has had a distinguished career at Bell Telephone Laboratories, where he has been instrumental in advancing semiconductor technologies. His innovative methods have paved the way for improved performance in GaAs devices, showcasing his expertise and dedication to the field.
Collaborations
Throughout his career, Casey has collaborated with esteemed colleagues such as Alfred Yi Cho and Philip W. Foy. These partnerships have further enriched his work and contributed to the advancements in semiconductor technology.
Conclusion
Horace C. Casey, Jr. stands out as a significant figure in the realm of semiconductor innovation. His contributions, particularly in the fabrication of GaAs devices, continue to influence the industry today.