Gyeonggi-do, South Korea

Hoo-Sung Kim


Average Co-Inventor Count = 2.9

ph-index = 3

Forward Citations = 59(Granted Patents)


Location History:

  • Yongin-si, KR (2010)
  • Gyeonggi-do, KR (2008 - 2012)

Company Filing History:


Years Active: 2008-2012

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4 patents (USPTO):Explore Patents

Title: Hoo-Sung Kim: Innovator in Semiconductor Memory Technology

Introduction

Hoo-Sung Kim is a talented inventor based in Gyeonggi-do, South Korea, known for his contributions to the field of semiconductor memory technology. With four patents to his name, he has played a significant role in advancing the reliability and efficiency of memory devices.

Latest Patents

One of his notable inventions is a "Non-volatile semiconductor memory device using weak cells as reading identifier." This innovative memory is designed to monitor read disturbances and protect stored data, utilizing a memory cell array that includes both normal and susceptible flag memory cells. Additionally, his work on the "Nonvolatile memory device and read method thereof" presents an improved read method that adapts read voltages to minimize read failures, enhancing the overall performance of non-volatile memory devices.

Career Highlights

Hoo-Sung Kim is currently employed at Samsung Electronics Co., Ltd., where he applies his expertise in memory technology to develop cutting-edge products. His career at Samsung has been marked by breakthroughs that not only contribute to the company’s reputation as a leader in electronics but also advance the technology that underpins modern computing.

Collaborations

Throughout his career, Hoo-Sung has collaborated with esteemed colleagues such as Hyung-Seok Kang and Eui-Gyu Han. These collaborations have fostered innovative thinking and the development of new technologies in the semiconductor field.

Conclusion

As an inventor, Hoo-Sung Kim continues to impact the semiconductor industry with his innovative approaches to memory technology. His work not only enhances the reliability of data storage but also lays the groundwork for future advancements in non-volatile memory solutions.

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