Hongxiang Mo

Title: Innovations by Hongxiang Mo in Semiconductor Technology

Introduction

Hongxiang Mo is a notable inventor based in Malta, NY (US), recognized for his contributions to semiconductor technology. He has developed innovative methods that enhance the efficiency and reliability of semiconductor devices. His work is particularly significant in the field of integrated circuits, where precision and protection of components are crucial.

Latest Patents

One of Hongxiang Mo's key patents is titled "Nitride layer protection between PFET source/drain regions and dummy gate during source/drain etch." This patent discloses methods of using a nitride layer to protect source and drain regions during the removal of dummy gates. The process involves several steps, including forming an oxide layer on a substrate, applying a nitride protection layer, and creating dummy gate stacks. The invention aims to improve the integrity of semiconductor devices by ensuring that the source and drain regions are adequately protected during fabrication.

Career Highlights

Hongxiang Mo is currently employed at GlobalFoundries Inc., a leading semiconductor manufacturer. His role involves research and development in advanced semiconductor processes. With a focus on innovation, he has made significant strides in enhancing device performance and manufacturability.

Collaborations

Throughout his career, Hongxiang Mo has collaborated with talented professionals in the field, including Xusheng Kevin Wu and Qi Zhang. These collaborations have fostered a creative environment that encourages the exchange of ideas and advancements in semiconductor technology.

Conclusion

Hongxiang Mo's contributions to the semiconductor industry, particularly through his innovative patent, demonstrate his commitment to advancing technology. His work not only enhances device performance but also sets a foundation for future innovations in the field.