Hongxia Xi

Title: Innovations of Hongxia Xi in Infrared Radiation Absorption

Introduction

Hongxia Xi is a notable inventor based in Shanghai, China. She has made significant contributions to the field of materials science, particularly in the development of infrared radiation absorbing technologies. Her innovative work has led to the filing of a patent that showcases her expertise and creativity.

Latest Patents

Hongxia Xi holds a patent for "Infrared radiation absorbing articles and method of manufacture." This patent describes a method for creating an infrared radiation absorbing coating mixture. The process involves forming an ITO coating mixture that is free of colloidal silica and includes a first coating matrix made from the partial condensate of a silanol. Additionally, a colloidal silica coating mixture is created, which also contains a second coating matrix made from a silanol partial condensate. The combined mixture produced does not exhibit any visible precipitate after two weeks without stirring, demonstrating its stability and effectiveness.

Career Highlights

Hongxia Xi is currently employed at Sabic Global Technologies B.V., where she continues to advance her research and development efforts. Her work at this company allows her to collaborate with other talented professionals in the field, further enhancing her contributions to innovative technologies.

Collaborations

Some of her coworkers include Liping Zheng and Steven Marc Gasworth. Their collaboration fosters a dynamic environment for innovation and problem-solving in the realm of materials science.

Conclusion

Hongxia Xi's work in infrared radiation absorption represents a significant advancement in material technology. Her patent and ongoing research contribute to the development of new applications in various industries.