Chengdu, China

Hongsong Ni

USPTO Granted Patents = 1 

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:

goldMedal1 out of 832,843 
Other
 patents

Years Active: 2021

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Hongsong Ni: Innovator in Flash Memory Technology

Introduction

Hongsong Ni is a notable inventor based in Chengdu, China. He has made significant contributions to the field of flash memory technology. His innovative work focuses on improving the efficiency of programming circuits used in flash memory devices.

Latest Patents

Hongsong Ni holds 1 patent for his invention titled "Programming circuit and programming method of flash memory." This invention relates to a programming circuit that includes a programming transistor and a storage cell connected in series. The design enhances the efficiency of the programming process without increasing channel current, thereby shortening the total programming time and improving overall performance.

Career Highlights

Throughout his career, Hongsong Ni has demonstrated a commitment to advancing technology in the field of memory storage. His work has been instrumental in developing methods that optimize the programming of flash memory, which is crucial for various electronic devices.

Collaborations

Hongsong Ni has worked alongside his coworker, Ming Wang, contributing to the development of innovative solutions in their field.

Conclusion

Hongsong Ni's contributions to flash memory technology exemplify the impact of innovative thinking in the electronics industry. His patent reflects a significant advancement that enhances the efficiency and performance of flash memory devices.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…