Hongsheng Jiang

Title: Innovations of Hongsheng Jiang in Ultraviolet Photodetectors

Introduction

Hongsheng Jiang is a prominent inventor based in Guangzhou, China. He has made significant contributions to the field of photodetectors, particularly in the development of solar-blind AlGaN ultraviolet (UV) photodetectors. His work focuses on enhancing the performance and efficiency of UV detection technologies.

Latest Patents

Hongsheng Jiang holds a patent for a solar-blind AlGaN ultraviolet photodetector and its preparation method. The invention details a solar-blind AlGaN UV photodetector that includes an epitaxial wafer composed of various layers, such as an undoped N-polar plane AlN buffer layer and a carbon-doped N-polar plane composition-graded AlGaN layer. This innovative design aims to improve the responsivity and detectivity of the photodetector in the UV solar-blind band, showcasing his expertise in advanced materials and semiconductor technology. He has 1 patent to his name.

Career Highlights

Hongsheng Jiang is affiliated with the South China University of Technology, where he continues to engage in research and development in the field of photonics. His academic background and ongoing projects contribute to the advancement of technology in UV detection.

Collaborations

Hongsheng Jiang has collaborated with notable colleagues, including Wenliang Wang and Linhao Li. Their joint efforts in research have furthered the understanding and application of UV photodetectors.

Conclusion

Hongsheng Jiang's innovative work in the field of solar-blind AlGaN ultraviolet photodetectors highlights his significant contributions to technology and research. His patent reflects a commitment to advancing photodetection methods, which may have far-reaching implications in various applications.