Hangzhou, China

Hongji Qi

USPTO Granted Patents = 6 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2024

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6 patents (USPTO):Explore Patents

Title: Innovations of Hongji Qi in Gallium Oxide Technology

Introduction

Hongji Qi is a prominent inventor based in Hangzhou, China, known for his significant contributions to the field of gallium oxide technology. With a total of six patents to his name, he has been at the forefront of developing innovative methods for preparing conductive and high-resistance gallium oxide materials. His work integrates advanced techniques such as deep learning and the Czochralski method, showcasing his commitment to pushing the boundaries of material science.

Latest Patents

One of Hongji Qi's latest patents is the "Preparation method of conductive gallium oxide based on deep learning and vertical Bridgman growth method." This innovative method involves obtaining preparation data for conductive gallium oxide single crystals, which includes seed crystal data, environmental data, control data, and raw material data. The process utilizes a trained neural network model to predict the properties of the conductive gallium oxide, including carrier concentration.

Another notable patent is the "Quality prediction method, preparation method and system of high resistance gallium oxide based on deep learning and Czochralski method." This patent outlines a quality prediction method that begins with gathering preparation data of high resistance gallium oxide single crystals. The data is then preprocessed and input into a trained neural network model to predict the quality of the gallium oxide, including resistivity.

Career Highlights

Hongji Qi is currently employed at Hangzhou Fujia Gallium Technology Co. Ltd., where he continues to innovate in the field of gallium oxide materials. His work has not only advanced the understanding of these materials but has also contributed to their practical applications in various industries.

Collaborations

Hongji Qi collaborates with talented individuals such as Duanyang Chen and Qinglin Sai, who contribute to his research and development efforts. Their combined expertise enhances the innovative potential of their projects.

Conclusion

Hongji Qi's contributions to gallium oxide technology through his patents and collaborative efforts highlight his role as a leading inventor in this field. His innovative methods are paving the way for advancements in material science and technology.

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