Hong-gu Ji

Title: Inventor Profile: Hong-gu Ji

Introduction

Hong-gu Ji is a remarkable inventor based in Daejeon, South Korea. He is known for his significant contribution to the field of semiconductor technology, particularly through his innovative work on high electron mobility transistors.

Latest Patents

Ji holds a patent for a pseudomorphic high electron mobility transistor (PHEMT) power device. This device is designed to operate with a single voltage source and is formed on a double planar doped epitaxial substrate. The PHEMT power device comprises multiple layers, including a GaAs buffer layer, an AlGaAs/GaAs superlattice layer, and an InGaAs electron transit layer, among others. This complex structure allows for enhanced performance in power applications.

Career Highlights

Hong-gu Ji works at the Electronics and Telecommunications Research Institute (ETRI), where he has been instrumental in advancing research and development projects. His work has positioned him as a leading figure in the field of electronics, particularly in high-frequency and high-efficiency power devices.

Collaborations

Throughout his career, Ji has collaborated with notable colleagues such as Haecheon Kim and Min Je Park. Together, they have contributed to various innovative projects that push the boundaries of electronic technology.

Conclusion

Hong-gu Ji exemplifies the spirit of innovation within the electronics industry. His patented PHEMT power device represents a significant advancement in semiconductor technology, showcasing his dedication to research and development. As he continues his work at the Electronics and Telecommunications Research Institute, his contributions are likely to have a lasting impact on the field.