Hong Du

Title: Innovations of Inventor Hong Du

Introduction

Hong Du is a notable inventor based in Cupertino, CA (US). He has made significant contributions to the field of integrated circuit technology. With a total of 2 patents, his work focuses on improving the fabrication processes of interconnect structures.

Latest Patents

One of Hong Du's latest patents is a method of fabricating a dual damascene interconnect structure. This method involves using a bi-layer mask that comprises an imaging film and an organic planarizing film. The bi-layer mask is essential for removing lithographic misalignment between a contact hole, a trench, and an underlying conductive line during the formation of the interconnect structure. Additionally, a sacrificial layer may be utilized to protect an inter-metal dielectric (IMD) layer during the subsequent planarization of the interconnect structure. This sacrificial layer can be made from materials such as amorphous silicon (Si), titanium nitride (TiN), or tungsten (W). The interconnect structure itself may consist of metals like copper (Cu), aluminum (Al), tantalum (Ti), tungsten (W), or titanium (Ti), as well as conductive compounds like tantalum nitride (TaN) and tungsten nitride (WN).

Career Highlights

Hong Du is currently employed at Applied Materials, Inc., where he continues to innovate in the field of semiconductor manufacturing. His expertise in integrated circuit technology has positioned him as a valuable asset to his company.

Collaborations

Some of his notable coworkers include Yan Ye and Xiaoye Zhao, who collaborate with him on various projects within the company.

Conclusion

Hong Du's contributions to the field of integrated circuits through his innovative patents and work at Applied Materials, Inc. highlight his importance as an inventor. His advancements in fabrication methods are paving the way for future developments in semiconductor technology.