Hock Ng

Title: Hock Ng - Innovator in Group III-Nitride Technology

Introduction

Hock Ng is a notable inventor based in Westfield, NJ (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of group III-nitride layers.

Latest Patents

Hock Ng holds 1 patent for his innovative work on "Group III-nitride layers with patterned surfaces." This patent describes a fabrication method that produces a mechanically patterned layer of group III-nitride. The method involves providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and features a pattern of holes or trenches that expose a portion of the substrate. Subsequently, a second layer of a second group III-nitride is epitaxially grown over the first layer and the exposed portion of the substrate. The first and second group III-nitrides possess different alloy compositions. Additionally, the method includes subjecting the second layer to an aqueous solution of base to mechanically pattern it.

Career Highlights

Hock Ng is currently employed at Nokia of America Corporation, where he continues to advance his research and development efforts in semiconductor technologies. His work has been instrumental in enhancing the performance and efficiency of electronic devices.

Collaborations

Hock Ng has collaborated with notable colleagues, including Aref Chowdhury and Richart Elliott Slusher, contributing to various projects and innovations in the field.

Conclusion

Hock Ng's contributions to group III-nitride technology exemplify his commitment to innovation in the semiconductor industry. His patent and ongoing work at Nokia of America Corporation highlight his role as a key figure in advancing technology.