Company Filing History:
Years Active: 1984
Title: The Innovative Contributions of Ho Q Vu
Introduction
Ho Q Vu is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
Ho Q Vu holds a patent for a method of making a semiconductor MOSFET device. This innovative approach involves bombarding a semiconductor substrate with radioactive rays. The process generates lattice defects within the substrate, making it semi-insulating. Subsequently, only the surface of the irradiated substrate is rendered semiconductive. This technique allows for the production of advanced semiconductor devices.
Career Highlights
Ho Q Vu is affiliated with Tokyo University, where he continues to engage in research and development. His work has garnered attention for its potential applications in various electronic devices. He is recognized for his expertise in semiconductor fabrication and device engineering.
Collaborations
Ho Q Vu has collaborated with Takuo Sugano, a fellow researcher in the field. Their partnership has contributed to advancements in semiconductor technology.
Conclusion
Ho Q Vu's innovative methods in semiconductor device fabrication highlight his significant role in the field. His contributions continue to influence the development of efficient electronic components.