Ho Lin

Title: The Innovative Contributions of Ho Lin

Introduction

Ho Lin is a prominent inventor based in Chengdu, China. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work primarily focuses on power MOSFET devices, which are crucial for various electronic applications.

Latest Patents

Ho Lin's latest patents include innovative methods for forming integrated circuits that incorporate power semiconductor devices. One of his notable patents is for a "Power MOSFET with metal filled deep sinker contact." This invention describes a method that involves providing a substrate with an epi layer, where contact openings are etched to form a sinker trench. The trench is filled with metal and dielectric materials to create a reliable sinker contact. Another significant patent is for a "Power MOSFET with metal filled deep source contact." This design features a planar gate power MOSFET with a trench that extends from the semiconductor surface, providing an efficient source contact to the substrate.

Career Highlights

Ho Lin is currently employed at Texas Instruments Corporation, a leading company in the semiconductor industry. His work at Texas Instruments has allowed him to develop cutting-edge technologies that enhance the performance and efficiency of power MOSFET devices.

Collaborations

Throughout his career, Ho Lin has collaborated with talented coworkers, including Yunlong Liu and Tianping Lv. These collaborations have contributed to the advancement of semiconductor technologies and have fostered a creative environment for innovation.

Conclusion

Ho Lin's contributions to the field of semiconductor technology are noteworthy, particularly in the development of power MOSFET devices. His innovative patents and work at Texas Instruments Corporation highlight his role as a leading inventor in this critical area of technology.