Ho-kyun Ahn

Title: Ho-kyun Ahn: Innovator in High Electron Mobility Transistor Technology

Introduction

Ho-kyun Ahn is a prominent inventor based in Daejeon, South Korea. He has made significant contributions to the field of electronics, particularly in the development of advanced semiconductor devices. His innovative work has led to the creation of a unique power device that enhances the performance of high electron mobility transistors.

Latest Patents

Ho-kyun Ahn holds a patent for a pseudomorphic high electron mobility transistor (PHEMT) power device. This device is formed on a double planar doped epitaxial substrate and is capable of operating with a single voltage source. The patent outlines a method for manufacturing the PHEMT power device, which includes a complex structure of various layers such as a GaAs buffer layer, an AlGaAs/GaAs superlattice layer, and an InGaAs electron transit layer. The design also features source and drain electrodes in ohmic contact with the undoped GaAs cap layer, along with a gate electrode extending through the cap layer.

Career Highlights

Ho-kyun Ahn is affiliated with the Electronics and Telecommunications Research Institute, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of electronic devices, making them more efficient and reliable.

Collaborations

Throughout his career, Ho-kyun Ahn has collaborated with notable colleagues, including Haecheon Kim and Min Je Park. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Ho-kyun Ahn's contributions to the field of high electron mobility transistors exemplify the spirit of innovation in modern electronics. His patented technology not only showcases his expertise but also paves the way for future advancements in semiconductor devices.