Toyama, Japan

Hitoshi Sekihara

This inventor holds 1 USPTO granted patent. Top assignee: Kokusai Electric Corporation. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hitoshi Sekihara. Retrieved from https://idiyas.com/inventor/hitoshi-sekihara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Hitoshi Sekihara: Innovator in Substrate Processing Technology

Introduction

Hitoshi Sekihara is a notable inventor based in Toyama, Japan. He has made significant contributions to the field of substrate processing technology. His innovative work has led to the development of a unique patent that enhances the efficiency of transfer chambers in various applications.

Latest Patents

Hitoshi Sekihara holds a patent for a "Substrate processing apparatus and recording medium for changing atmosphere of transfer chamber." This invention features a configuration that includes an intake damper and an intake fan that communicate with an intake port to suck air into a transfer chamber connected to a process chamber. It also includes a valve for an inert gas introduction pipe, which supplies inert gas to the transfer chamber. The apparatus is equipped with an exhaust fan and a first exhaust valve installed in the transfer chamber. A switch allows the selection between an atmospheric mode, where the atmosphere is air, and a purge mode, where the atmosphere is inert gas. A controller manages the operation of the intake damper, intake fan, inert gas valve, exhaust fan, and exhaust valve to execute the desired mode.

Career Highlights

Hitoshi Sekihara is currently employed at Kokusai Electric Corporation, where he continues to innovate and develop advanced technologies in substrate processing. His work has been instrumental in improving the efficiency and effectiveness of various industrial processes.

Collaborations

Hitoshi has collaborated with notable colleagues, including Satoru Takahata and Ichiro Nunomura, contributing to a dynamic and innovative work environment.

Conclusion

Hitoshi Sekihara's contributions to substrate processing technology exemplify the impact of innovation in the field. His patent reflects a commitment to advancing technology and improving industrial processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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