This inventor holds 1 USPTO granted patent. Top assignee: Fujitsu Corporation. Active years: 1982.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1982
Title: Hitoshi Hoshino: Innovator in Semiconductor Technology
Introduction
Hitoshi Hoshino is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the area of dry etching processes.
Latest Patents
Hoshino holds a patent for a process titled "Dry etching of metal film." This innovative method involves the dry etching of aluminum films or aluminum-based films, utilizing a mixed gas of carbon chloride and boron chloride as the etchant gas. This patent is crucial for the production of semiconductor devices.
Career Highlights
Hitoshi Hoshino is associated with Fujitsu Corporation, a leading technology company known for its advancements in electronics and computing. His work at Fujitsu has allowed him to explore and develop cutting-edge technologies in semiconductor manufacturing.
Collaborations
Hoshino has collaborated with notable colleagues, including Tadakazu Takada and Kazuo Tokitomo. These partnerships have fostered innovation and contributed to the advancement of semiconductor technologies.
Conclusion
Hitoshi Hoshino's contributions to semiconductor technology through his patent and work at Fujitsu Corporation highlight his role as an influential inventor in the industry. His innovative approaches continue to shape the future of semiconductor manufacturing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile