Yokohama, Japan

Hitoshi Hoshino


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 26(Granted Patents)


Company Filing History:


Years Active: 1982

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1 patent (USPTO):Explore Patents

Title: Hitoshi Hoshino: Innovator in Semiconductor Technology

Introduction

Hitoshi Hoshino is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the area of dry etching processes.

Latest Patents

Hoshino holds a patent for a process titled "Dry etching of metal film." This innovative method involves the dry etching of aluminum films or aluminum-based films, utilizing a mixed gas of carbon chloride and boron chloride as the etchant gas. This patent is crucial for the production of semiconductor devices.

Career Highlights

Hitoshi Hoshino is associated with Fujitsu Corporation, a leading technology company known for its advancements in electronics and computing. His work at Fujitsu has allowed him to explore and develop cutting-edge technologies in semiconductor manufacturing.

Collaborations

Hoshino has collaborated with notable colleagues, including Tadakazu Takada and Kazuo Tokitomo. These partnerships have fostered innovation and contributed to the advancement of semiconductor technologies.

Conclusion

Hitoshi Hoshino's contributions to semiconductor technology through his patent and work at Fujitsu Corporation highlight his role as an influential inventor in the industry. His innovative approaches continue to shape the future of semiconductor manufacturing.

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