Hisasi Koyamao

Title: Hisasi Koyamao: Innovator in Diamond Film Technology

Introduction

Hisasi Koyamao is a notable inventor based in Kobe, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work with diamond films. His expertise and inventions have garnered attention in the scientific community.

Latest Patents

Hisasi Koyamao holds a patent for a highly-oriented diamond film field-effect transistor. This invention features a source electrode formed on the first semiconducting diamond film and a drain electrode on the second semiconducting diamond film. A highly resistant diamond film, with a thickness between 10 Å and 1 mm and an electrical resistance of at least 10² Ω.cm or more, is placed between the two semiconducting diamond films. A gate electrode is formed on this highly resistant diamond film, creating a channel region. The invention emphasizes the use of highly-oriented diamond films, where either (100) or (111) crystal planes cover at least 80% of the film surface, ensuring precise crystal plane orientation.

Career Highlights

Hisasi Koyamao is currently employed at Kobe Steel USA, Inc. His work at this company has allowed him to further develop his innovative ideas and contribute to advancements in semiconductor technology. His dedication to research and development has positioned him as a key figure in his field.

Collaborations

Hisasi Koyamao has collaborated with notable colleagues, including Koichi Miyata and Kimitsugu Saito. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Hisasi Koyamao's contributions to the field of diamond film technology exemplify the impact of innovative thinking in semiconductor applications. His patent for a highly-oriented diamond film field-effect transistor showcases his expertise and commitment to advancing technology.