Mizuho, Japan

Hisashi Hashiguchi

USPTO Granted Patents = 1 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Hisashi Hashiguchi: Innovator in Plasma Processing Technology

Introduction

Hisashi Hashiguchi is an inventor based in Yokkaichi-shi, Japan. He has made significant contributions to the field of plasma processing technology. His innovative approach focuses on the design and functionality of electrodes used in plasma processing apparatuses.

Latest Patent Applications

Hisashi Hashiguchi has filed a patent application titled "ELECTRODE FOR PLASMA PROCESSING APPARATUS, METHOD FOR MANUFACTURING THE SAME, AND PLASMA PROCESSING APPARATUS." This application describes an inner electrode with multiple gas holes, featuring a first contact surface on part of its outer peripheral surface. The outer electrode is designed with a second contact surface that corresponds to the first contact surface of the inner electrode. The two electrodes make contact at these surfaces, and a brazing filler metal is utilized to join them through a filling hole that connects to the contact surfaces.

Conclusion

Hisashi Hashiguchi's work in plasma processing technology showcases his innovative spirit and dedication to advancing the field. His contributions, particularly through his latest patent application, highlight the importance of effective electrode design in plasma processing systems.

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