Hisashi Furuya

Title: Hisashi Furuya: Innovator in Silicon Crystal Growth

Introduction

Hisashi Furuya is a notable inventor recognized for his contributions to the field of silicon crystal growth. He is based in Itami, Japan, and has made significant advancements in the methods and apparatus used for growing silicon crystals. His innovative approach has implications for various industries, particularly in electronics and materials science.

Latest Patents

Hisashi Furuya holds a patent for a method and apparatus for growing silicon crystals. This patent describes a silicon single-crystal growing method that involves immersing a seed crystal in a silicon melt and pulling the seed crystal from the melt to grow a silicon single-crystal. The method specifies that the dwelling time of the silicon single-crystal, while being pulled in a temperature range of 1,050°C to 850°C, should not exceed 140 minutes. The apparatus designed for this method includes a crucible, a pulling mechanism, and a temperature control shell, which cools the silicon single-crystal at a controlled rate.

Career Highlights

Throughout his career, Hisashi Furuya has worked with prominent companies such as Mitsubishi Kinzoku Kabushiki Kaisha and Japan Silicon Co., Ltd. His experience in these organizations has allowed him to refine his expertise in silicon crystal growth and contribute to advancements in the field.

Collaborations

Hisashi Furuya has collaborated with notable colleagues, including Ichiro Yamashita and Koutaro Shimizu. These collaborations have fostered innovation and development in the technologies related to silicon crystal growth.

Conclusion

Hisashi Furuya's work in the field of silicon crystal growth exemplifies the impact of innovative thinking in technology. His patented methods and career achievements highlight his role as a significant contributor to advancements in materials science.