Shiga, Japan

Hisaji Nisimura


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Hisaji Nisimura: Innovator in Semiconductor Technology

Introduction

Hisaji Nisimura is a notable inventor based in Shiga, Japan, recognized for his contributions to the field of semiconductor technology. With a focus on improving the performance and efficiency of semiconductor devices, Nisimura has developed a significant patent that addresses key challenges in this industry.

Latest Patents

Nisimura holds one patent titled "SOI semiconductor device having gettering layer and method for producing the same". This innovative patent describes an SOI (Silicon-On-Insulator) semiconductor device that includes an insulating film and a semiconductor layer. The active semiconductor element is formed within an element formation region, which is surrounded by an isolating region that isolates the semiconductor layer. A critical feature of Nisimura's invention is the gettering layer, which contains a high concentration of impurities and is strategically positioned in areas of the semiconductor layer where the active semiconductor element is not formed. This design enhances the performance of the semiconductor device by improving its stability and efficiency.

Career Highlights

Hisaji Nisimura is currently affiliated with Matsushita Electric Industrial Co., Ltd., where he applies his expertise in semiconductor technology. His work at Matsushita has allowed him to delve into advanced research and development projects, leading to his notable patent achievements.

Collaborations

Throughout his career, Nisimura has collaborated with esteemed colleagues, including Katsushige Yamashita and Hiromu Yamazaki. These collaborations have fostered a rich exchange of innovative ideas, further advancing the field of semiconductor technology and reinforcing the importance of teamwork in achieving significant scientific breakthroughs.

Conclusion

Hisaji Nisimura's contributions to the semiconductor industry, particularly through his patented SOI semiconductor device, illustrate his dedication to innovation and excellence in technology. As the industry continues to evolve, Nisimura's work remains a testament to the impact that skilled inventors can have on advancing technology and enhancing electronic devices.

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