Company Filing History:
Years Active: 1996
Title: Hiroyuki Toyama: Innovator in Semiconductor Technology
Introduction
Hiroyuki Toyama is a prominent inventor based in Kitakami, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent work. His expertise and dedication to advancing technology have established him as a notable figure in the industry.
Latest Patents
Hiroyuki Toyama holds a patent for a "Method for forming silicon oxide on a semiconductor." This invention involves a plasma CVD device that includes a chamber, an upper electrode, and an under electrode designed to mount a sample. The device utilizes multiple power sources with different frequencies connected to the upper electrode. The process introduces gas into the chamber, which contains an organic silicon compound, CF₄, and O₂, with a specific element ratio of silicon to fluorine set to 15 or more. The organic silicon compounds used include Si(OC₂H₅)₄ or Si(OCH₃)₄.
Career Highlights
Hiroyuki Toyama is associated with Kabushiki Kaisha Tohsiba, where he has contributed to various projects and innovations in semiconductor technology. His work has been instrumental in enhancing the efficiency and effectiveness of semiconductor manufacturing processes.
Collaborations
Hiroyuki has collaborated with notable coworkers, including Naruhiko Kaji and Riichirou Aoki. Their combined efforts have led to advancements in the field and have fostered a collaborative environment for innovation.
Conclusion
Hiroyuki Toyama's contributions to semiconductor technology through his patent and collaborative efforts highlight his importance in the field. His work continues to influence advancements in technology and innovation.