Company Filing History:
Years Active: 1998
Title: Hiroshi Ogino: Innovator in Semiconductor Technology
Introduction
Hiroshi Ogino is a prominent inventor based in Oita, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent that enhances the process of film formation on semiconductor substrates.
Latest Patents
Hiroshi Ogino holds a patent for a "Method for forming film on semiconductor substrate by thermal CVD method." This invention involves supporting a semiconductor substrate on a lower electrode within a chamber. The substrate is heated to approximately 600 to 700 degrees Celsius using radiation heat from a halogen lamp. The pressure in the chamber is reduced to about 0.1 to 1 Torr, with the lower electrode acting as a positive electrode and an upper electrode as a negative electrode. A DC voltage of 20 V is applied from a DC power supply, and a material gas is introduced into the chamber. This process allows for the growth of a polysilicon film on an oxide film on the semiconductor substrate. The electricity in the oxide film increases the initial growth rate of the polysilicon film and prevents the formation of pinholes.
Career Highlights
Hiroshi Ogino is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work has been instrumental in advancing semiconductor manufacturing techniques, which are crucial for the development of modern electronic devices.
Collaborations
Hiroshi has collaborated with notable colleagues, including Takashi Suzuki and Akihito Yamamoto. Their combined expertise has contributed to the success of various projects within the semiconductor field.
Conclusion
Hiroshi Ogino's innovative work in semiconductor technology, particularly his patented method for film formation, showcases his significant impact on the industry. His contributions continue to influence advancements in electronic manufacturing processes.