Company Filing History:
Years Active: 2012
Title: Hiroshi Nagata: Innovator in Semiconductor Technology
Introduction
Hiroshi Nagata is a prominent inventor based in Hitachi, Japan. He has made significant contributions to the field of semiconductor technology, particularly in power conversion apparatuses. His innovative work has led to the development of a patent that enhances the reliability and efficiency of semiconductor devices.
Latest Patents
Hiroshi Nagata holds a patent for a semiconductor power conversion apparatus. This invention is designed to protect an Insulated Gate Bipolar Transistor (IGBT) from overvoltage conditions. The apparatus achieves this by supplying sufficient gate current to the IGBT's gate. It incorporates clamping elements connected in series between the collector of the IGBT and its gate. Additionally, resistors are connected to various junction points between these clamping elements, ensuring robust protection against overvoltage.
Career Highlights
Hiroshi Nagata is associated with Hitachi, Ltd., a leading company in technology and innovation. His work at Hitachi has allowed him to focus on advancing semiconductor technologies that are crucial for modern electronic devices. His dedication to research and development has positioned him as a key figure in his field.
Collaborations
Hiroshi has collaborated with notable colleagues, including Shuji Katoh and Toshihiko Matsuda. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.
Conclusion
Hiroshi Nagata's contributions to semiconductor technology exemplify the impact of innovative thinking in engineering. His patent for a semiconductor power conversion apparatus showcases his commitment to enhancing device reliability. Through his work at Hitachi and collaborations with esteemed colleagues, he continues to influence the future of semiconductor technology.